Профессор СПБГУ О.Ф.Вывенко о международной научной конференции STRANN, а также об истории и развитии междисциплинарного ресурсного центра по направлению "нанотехнологии"

sitemap
Наш сайт использует cookies. Продолжая просмотр, вы даёте согласие на обработку персональных данных и соглашаетесь с нашей Политикой Конфиденциальности
Согласен
Search:

Sign in
Nanoindustry
Editorial policy
Editorial collegium
Editorial board
Articles annotations
For authors
For reviewers
Publisher
TECHNOSPHERA
TS_pub
technospheramag
technospheramag
ТЕХНОСФЕРА_РИЦ
© 2001-2025
JSC "TECHNOSPHERA".
All rights reserved.
Phone +7 (495) 234-0110
Оферта

Яндекс.Метрика
R&W
 
 
Sign in:

Your e-mail:
Password:
 
Create your account
Forgot your password?
FOR AUTHORS:

Instruction to authors
FOR REVIEWERS:

Книги по нанотехнологиям
Другие серии книг:
Мир материалов и технологий
Библиотека Института стратегий развития
Мир квантовых технологий
Мир математики
Мир физики и техники
Мир биологии и медицины
Мир химии
Мир наук о Земле
Мир электроники
Мир программирования
Мир связи
Мир строительства
Мир цифровой обработки
Мир экономики
Мир дизайна
Мир увлечений
Мир робототехники и мехатроники
Для кофейников
Мир радиоэлектроники
Библиотечка «КВАНТ»
Умный дом
Мировые бренды
Вне серий
Библиотека климатехника
Мир транспорта
Мир фотоники
Мир станкостроения
Мир метрологии
Мир энергетики
Книги, изданные при поддержке РФФИ
Content & Annotations of Issue #7/2016
Competent opinion
Nanotechnology
L.Kolesnik, S.Marinich, A.Seleznev
Inert gas assisted cluster deposition of copper
With use of jet vapor deposition with the specially developed source of material, the copper coatings having a cluster structure are obtained.
D.Andreev, O.Kovaleva, D.Koptsev
Microwave characteristics of transistors made of silicon-on-insulator with a channel length of 180 nm
Characteristics obtained using a BSIMSOI4 SPICE model are comparing with results of experimental measurements of transistors manufactured by Mikron using CMOS silicon on insulator (SOI) 0.18 μm process.
A.Benediktov, P.Ignatov
Modeling of full and partial depletion for high-temperature transistors on silicon-on-insulator structures
The features of motion of major charge carriers in the space between the drain and source of SOI MOS transistors at different ambient temperatures are considered. The full and partial depletion of transistors is simulated.
Test & Measurement
K.Mochalov, A.Chistyakov, D.Solovyeva, A.Mezin, V.Oleinikov, I.Nabiev, I.Agapov, A.Efimov
Hardware combination of confocal microspectroscopy and 3D scanning probe nano-tomography
Instrumental approach to combination of confocal microspectroscopy and the 3D scanning probe nano-tomography in a single device is developed.
A.Useinov, K.Kravchuk, A.Rusakov, I.Maslenikov, I.Krasnogorov
Methods of automation of mechanical properties measurements in NanoScan nanohardness testers
Tools for automation of mechanical properties measurements using NanoScan nanohardness tester are considered, including measurement generators, templates and specialized macro language.
A.Ahmetova, G.Meshkov, I.Nazarov, O.Sinitsyna, I.Yaminsky
Detection of viruses and bacteria in scanning probe microscopy
The prospects of use of flow-through liquid cell and a specialized biochip for fixation of biological objects are considered.
Military and space technology
E.Kuznetsov, A.Saurov
Hardware Trojans. Part 1: new th reats to cyber security
Potential threats to cyber security caused by hardware Trojans are considered. The possible ways of their unauthorized insertion are examined. The comprehensive classification of hardware Trojans is presented.
N.Malashevich
RAM cell that is resistant to external factors
The article shows the feasibility of single-port and dual-port blocks of random access memory (RAM) on gate arrays (GA) of 5521 and 5529 families, which has an increased resistance to external factors. RAM memory cell is considered.
V.Konyahin, R.Fedorov
Microchip for thyristor effect protection
The paper describes the operation principles, structure and connection layout of the latch-up protection circuit designed for space-related equipment.
A.Lykyanov, R.Fedorov
Digital galvanic isolation circuit
The paper describes the development of a dual-channel transformer galvanic isolation circuit on the basis of the unified cell library of 5521 gate array family, the main functional units and the principles of their operation.
А.Semenov, S.Belostotskaya
Creating one-time programmable elements for 5521 and 5529 gate array families
The paper describes an example of fusible links (FL) design for 5521 and 5529 gate array families. The experimental data of the obtained samples of FL are presented.
D.Mamonov
Control circuit for matrix alphanumeric LED-displays (7 × 5)
The paper describes the design features of radiation-resistant circuit 5521TR034-726 for control of eight matrix alphanumeric displays (7 × 5) based on 5521 gate array family.
Education
Issues of patenting
D.Sokolov
Umbrella patent for invention
The features of creation of umbrella patents is considered.
Разработка: студия Green Art