rus
Issue #9/2018
Chernikova Anna G., Krasnikov Gennady Ya., Gornev Evgenii S., Kozodayev Maksim G., Negrov Dmitriy V., Orlov Oleg M., Zenkevich Andrey V., Markeyev Andrey M.
HfO2-Based 1T-1C Ferroelectric Memory Cells and Arrays
HfO2-Based 1T-1C Ferroelectric Memory Cells and Arrays
Теги: atomic layer deposition ferroelectricity hafnium oxide non-volatile memory orthorhombic phase. thin films атомно-слоевое осаждение оксид гафния орторомбическая фаза сегнетоэлектричество тонкие пленки энергонезависимая память
In this work, we report on the formation of 1T-1C ferroelectric memory cell based on the fully atomic layer deposited (ALD) TiN/Hf0.5Zr0.5O2/TiN trilayers, i.e. ferroelectric capacitor. This ferroelectric capacitor based on 10nm thick Hf0.5Zr0.5O2 exhibits ferroelectric properties with the remnant polarization of 2Pr = 20 μC/cm2. It was integrated with CMOS transistors, formed by 180nm technological node. As formed fully CMOS compatible memory cells were found to demonstrate rather good endurance following 1010 switching cycles. Further, the formation of 1Mb array of such 1T-1C memory cells was successfully demonstrated. Moreover, in this work we present the further discussion of the possible ways to improve the properties of such FeRAM cells in terms of materials engineering. For this purpose ternary multicomponent HfO2-ZrO2-La2O3 system was investigated in terms of ferroelectric response in dependence of annealing temperature, which would result in the preferred ferroelectric orthorhombic polar phase formation. As a result, rather promising remnant polarization value as well as endurance characteristics of fully plasma-enhanced ALD grown TiN/HfO2-ZrO2-La2O3/TiN trilayers were demonstrated.
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