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technospheramag
ТЕХНОСФЕРА_РИЦ
Issue #9/2018
Galimov Arthur M.
Compact Modeling of Soft Error Rates: From Proton Testing Data to Heavy Ions Induced Rates and Vice Versa
Compact Modeling of Soft Error Rates: From Proton Testing Data to Heavy Ions Induced Rates and Vice Versa
Based on compact model a soft error rates calculation technique is presented. The method allows to convert the proton cross-section data to the heavy ion induced error rates and vice versa. The verification of proposed technique is presented.
Теги: cots memory devices heavy ions protons soft error rates коммерческие интегральные микросхемы (имс) памяти протоны тяжелые заряженные частицы частоты сбоев
Along with microelectronics technologies development, new requirements for performance of the spice-borne equipment appear. The radiation-hardened components provide high reliability marks, but often do not comply with the requirements for performance. That is why there is a tendency to use the commercial off-the-shelf (COTS) components as a part of space-born processor systems. These components provide rather high performance, but, in practice, they are very sensitive to single event upset caused by heavy ions (HI) and high energy protons (HEP). Due to the complications in access to the chip die there is the topical issue of developing the method of converting the cross-section of upsets from HEP to cross-section from HI.
In order to model the secondary particles spectra the physical simulator Geant-4 has been developed. This tool uses the Monte-Carlo technique to score the differential LET-spectrum of secondary particles from the HEP projectiles Eqn001.eps. Using the phenomenological approach to describe a single event upset, the amount of experimentally obtained upsets at HEP energy ep may be represented in the following form:
Eqn003.eps,(1)
where Eqn004.eps is cross-section of upsets caused by secondary particles.
In case of COTS memory microcircuits the results of performed experiments have revealed that dependence of upsets cross-section on HI’s LET is linear in the above-threshold span:
Eqn005.eps,(2)
where Kd and LC are linear parameters of the experimental data approximation. Besides, parameter LC usually constitutes 0.5 ~ 1MeV-cm2/mg. Based on the given cross-section form for direct ionization, it is possible to determine parameter Kd in the following form:
Eqn010.eps,(3)
where average LET is Eqn011.eps:
Eqn012.eps.(4)
Fig. 1 shows the results of comparison between calculated and experimental values of Kd.
Fig. 1 shows that the proposed approach agrees rather satisfactorily with the experimental data.
In order to model the secondary particles spectra the physical simulator Geant-4 has been developed. This tool uses the Monte-Carlo technique to score the differential LET-spectrum of secondary particles from the HEP projectiles Eqn001.eps. Using the phenomenological approach to describe a single event upset, the amount of experimentally obtained upsets at HEP energy ep may be represented in the following form:
Eqn003.eps,(1)
where Eqn004.eps is cross-section of upsets caused by secondary particles.
In case of COTS memory microcircuits the results of performed experiments have revealed that dependence of upsets cross-section on HI’s LET is linear in the above-threshold span:
Eqn005.eps,(2)
where Kd and LC are linear parameters of the experimental data approximation. Besides, parameter LC usually constitutes 0.5 ~ 1MeV-cm2/mg. Based on the given cross-section form for direct ionization, it is possible to determine parameter Kd in the following form:
Eqn010.eps,(3)
where average LET is Eqn011.eps:
Eqn012.eps.(4)
Fig. 1 shows the results of comparison between calculated and experimental values of Kd.
Fig. 1 shows that the proposed approach agrees rather satisfactorily with the experimental data.
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