Anisotropy of the surface energy of crystal materials used in the silicon technology has been calculated with a model of coordination melting. Based on these calculations and some experimental data, anisotropies of electron work function on different faces of Al, Cu, Au, Ni, Ta, Cr, W crystals and their surface melting temperature have been evaluated. The paper highlights the relation between physical-chemical properties of crystallographicaly different metals surfaces of the cubic crystal system and the surface arrangement of atoms in the first coordination spheres.