rus
Special Issue/2019
A. A. Sharapov, G. V. Baranov
Analyzing factors infl uencing the roughness of Si microelectronics topological structures
Analyzing factors infl uencing the roughness of Si microelectronics topological structures
We investigated the physics of the phenomena that cause the appearance and modification of the side surfaces roughness of nanoscale topological structures. We considered various technological techniques that allow reducing the roughness value in Si structures, and we proposed a number of methods to control the roughness of micro- and nanoelectronic structures.
We investigated the physics of the phenomena that cause the appearance and modification of the side surfaces roughness of nanoscale topological structures. We considered various technological techniques that allow reducing the roughness value in Si structures, and we proposed a number of methods to control the roughness of micro- and nanoelectronic structures.
Readers feedback
