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TS_pub
technospheramag
technospheramag
ТЕХНОСФЕРА_РИЦ
Special Issue/2019
N. A. Tulina, A. N. Rossolenko, I. M. Shmytko, А. A. Ivanov, А. М. Ionov, S. I. Bozhko, V. V. Sirotkin, I. Yu. Borisenko,
Functional properties of anisotropic perovskite compounds in memristor structures for application in electronics
Functional properties of anisotropic perovskite compounds in memristor structures for application in electronics
The paper highlights bipolar resistive switching in Bi2Sr2CaCu2O8+y, Ва0.6K0.4BiO3−x single crystal- and Nd1.86Ce0.14CuO4 and YBa2Cu3O7−d epitaxial film-based heterostructures. The results are discussed in terms of fundamental properties of the parent HTSC compounds — antiferromagnetic metal-insulator due to oxygen doping. The formation and decay of a percolation channel during switching has been numerically simulated.
The paper highlights bipolar resistive switching in Bi2Sr2CaCu2O8+y, Ва0.6K0.4BiO3−x single crystal- and Nd1.86Ce0.14CuO4 and YBa2Cu3O7−d epitaxial film-based heterostructures. The results are discussed in terms of fundamental properties of the parent HTSC compounds — antiferromagnetic metal-insulator due to oxygen doping. The formation and decay of a percolation channel during switching has been numerically simulated.
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