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TS_pub
technospheramag
technospheramag
ТЕХНОСФЕРА_РИЦ
Special Issue/2019
A. A. Golishnikov, M. G. Putrya, V. I. Shevyakov
Researching silicon deep plasma etching process for producing 3D-TSV structures
Researching silicon deep plasma etching process for producing 3D-TSV structures
The paper presents the results of studies of one of the fundamental processes in the 3D ICs technology — the silicon deep plasma etching for 3D-TSV structures producing. Besides, the work studies the influence of operating parameters in Si etching cycle on the process characteristics in high-density transformer coupled plasma (TCP). The ion-stimulated mechanism of the fluoride-carbon film deposition has been shown.
The paper presents the results of studies of one of the fundamental processes in the 3D ICs technology — the silicon deep plasma etching for 3D-TSV structures producing. Besides, the work studies the influence of operating parameters in Si etching cycle on the process characteristics in high-density transformer coupled plasma (TCP). The ion-stimulated mechanism of the fluoride-carbon film deposition has been shown.
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