rus
Special Issue/2019
A. A. Glushko, M. G. Chistyakov, I. V. Kudinov, S. A. Morozov, G. A. Yashin, A. V. Amirkhanov, V. V. Makarchuk, L. A. Zinchenko
Combining radiation transport simulations with TCAD modeling to address Single Event Eff ects
Combining radiation transport simulations with TCAD modeling to address Single Event Eff ects
The paper presents a procedure that allows multi-stage description of different physical processes taking place inside irradiated microelectronic devices. It incorporates modeling of initial interactions of bombarding energetic particles with matter, 3D simulation of charge carriers generated in the affected region and circuit-level computations that provide whole-system response. Here we discuss issues related to practical implementation of the procedure. Examples concerning SEU in SRAM cells irradiated with 14 MeV neutrons have been presented.
The paper presents a procedure that allows multi-stage description of different physical processes taking place inside irradiated microelectronic devices. It incorporates modeling of initial interactions of bombarding energetic particles with matter, 3D simulation of charge carriers generated in the affected region and circuit-level computations that provide whole-system response. Here we discuss issues related to practical implementation of the procedure. Examples concerning SEU in SRAM cells irradiated with 14 MeV neutrons have been presented.
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