rus
TS_pub
technospheramag
technospheramag
ТЕХНОСФЕРА_РИЦ
Special Issue/2019
S. Yu. Suzdaltsev, D. Yu. Obizhaev, S. Yu. Ivanov, S. A. Zhukova, V. E. Turkov
Applying silicon wafer direct bonding for creating sealed connector of MEMS sensing devices
Applying silicon wafer direct bonding for creating sealed connector of MEMS sensing devices
The paper considers the features of thermal annealing of Si and PECVD SiO2 surfaces which allows achieving high-quality direct bonding. Tentative annealing at 1000 °C and basic annealing at 800 °C of plates with PECVD SiO2 layers lead to high-quality bonding as plates after thermal oxidation.
The paper considers the features of thermal annealing of Si and PECVD SiO2 surfaces which allows achieving high-quality direct bonding. Tentative annealing at 1000 °C and basic annealing at 800 °C of plates with PECVD SiO2 layers lead to high-quality bonding as plates after thermal oxidation.
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