rus
TS_pub
technospheramag
technospheramag
ТЕХНОСФЕРА_РИЦ
Special Issue/2019
A. N. Alexeev S. I. Petrov V. V. Mamaev S. A. Novikov E. V. Lutsenko N. V. Rzheutskii
Advantages of using Russian ammonia MBE system for growing nitride heterostructures for microelectronics
Advantages of using Russian ammonia MBE system for growing nitride heterostructures for microelectronics
The paper deals with using an AlN buffer layer grown at extremely high temperatures (up to 1150 °C) in combination with AlN/AlGaN superlattices at the Russian STE3N MBE System using ammonia as a nitrogen source, which allows drastically improving the structural quality of active GaN layers (dislocation density reduced to 9 ⋅ 108–1 ⋅ 109 cm−2, as well as increasing the mobility of electrons in the GaN/AlGaN channel to 2000 cm2/V⋅s, and providing the device-level quality of heterostructures for microelectronics.
The paper deals with using an AlN buffer layer grown at extremely high temperatures (up to 1150 °C) in combination with AlN/AlGaN superlattices at the Russian STE3N MBE System using ammonia as a nitrogen source, which allows drastically improving the structural quality of active GaN layers (dislocation density reduced to 9 ⋅ 108–1 ⋅ 109 cm−2, as well as increasing the mobility of electrons in the GaN/AlGaN channel to 2000 cm2/V⋅s, and providing the device-level quality of heterostructures for microelectronics.
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