rus
Test & Measurement
V. I. Plebanovich S. M. Avakaw
Microdefect inspection tools as necessary system technology constituent Can you imagine how much harm can be done by defects in the course of IC fabrication? Some experts do not pay enough attention and lose resources. However, there is an answer to this challenge called Automatic Defect Inspection Tools and this is exactly what contemporary IC production process needs for defect-free IC fabrication.
Microdefect inspection tools as necessary system technology constituent Can you imagine how much harm can be done by defects in the course of IC fabrication? Some experts do not pay enough attention and lose resources. However, there is an answer to this challenge called Automatic Defect Inspection Tools and this is exactly what contemporary IC production process needs for defect-free IC fabrication.
K. V. Grigorash
The role of standardization in designing systems, tools and electronic component base for the development of ACS and communications of the Russian Federation Armed Forces Report on the need to standardize the process of development and production of complex and high-tech hardware and software ACS and communications and providing electronic component base (ECB) in the interests of import substitution and technological independence of the domestic market of microelectronics.
The role of standardization in designing systems, tools and electronic component base for the development of ACS and communications of the Russian Federation Armed Forces Report on the need to standardize the process of development and production of complex and high-tech hardware and software ACS and communications and providing electronic component base (ECB) in the interests of import substitution and technological independence of the domestic market of microelectronics.
A. N. Alexeev S. I. Petrov V. V. Mamaev S. A. Novikov E. V. Lutsenko N. V. Rzheutskii
Advantages of using Russian ammonia MBE system for growing nitride heterostructures for microelectronics The paper deals with using an AlN buffer layer grown at extremely high temperatures (up to 1150 °C) in combination with AlN/AlGaN superlattices at the Russian STE3N MBE System using ammonia as a nitrogen source, which allows drastically improving the structural quality of active GaN layers (dislocation density reduced to 9 ⋅ 108–1 ⋅ 109 cm−2, as well as increasing the mobility of electrons in the GaN/AlGaN channel to 2000 cm2/V⋅s, and providing the device-level quality of heterostructures for microelectronics.
Advantages of using Russian ammonia MBE system for growing nitride heterostructures for microelectronics The paper deals with using an AlN buffer layer grown at extremely high temperatures (up to 1150 °C) in combination with AlN/AlGaN superlattices at the Russian STE3N MBE System using ammonia as a nitrogen source, which allows drastically improving the structural quality of active GaN layers (dislocation density reduced to 9 ⋅ 108–1 ⋅ 109 cm−2, as well as increasing the mobility of electrons in the GaN/AlGaN channel to 2000 cm2/V⋅s, and providing the device-level quality of heterostructures for microelectronics.
M. G. Biryukov V. V. Odinokov
Vacuum-plasma processes and experimental equipment for optimizing technologies on O200 mm plates with topological dimensions of 180–65 nanometers level The paper highlights current vacuum-plasma processes and experimental equipment, such as atomic-layer deposition, plasma-chemical etching, shallow trench isolation technique and wafer stripping.
Vacuum-plasma processes and experimental equipment for optimizing technologies on O200 mm plates with topological dimensions of 180–65 nanometers level The paper highlights current vacuum-plasma processes and experimental equipment, such as atomic-layer deposition, plasma-chemical etching, shallow trench isolation technique and wafer stripping.
Yu. V. Gerasimenko V. F. Tupikin A. S. Ermakova N. V. Komarov V. N. Komarov A. I. Sergienko
Promising directions of developing specialized domestic equipment for wafer technochemical processing in technological process of manufacturing microcircuits, MEMS and microassemblies The paper presents a complex review of the specialized equipment for the wafers techno-chemical processing, as well as considers the main world trends in the production of special technological equipment for manufacturing integrated circuits, MEMS and microassemblies, summing up the experience of Scientific Research Institute of Semiconductor Mechanical Engineering in this field.
Promising directions of developing specialized domestic equipment for wafer technochemical processing in technological process of manufacturing microcircuits, MEMS and microassemblies The paper presents a complex review of the specialized equipment for the wafers techno-chemical processing, as well as considers the main world trends in the production of special technological equipment for manufacturing integrated circuits, MEMS and microassemblies, summing up the experience of Scientific Research Institute of Semiconductor Mechanical Engineering in this field.
D. S. Semichasnova V. V. Kondrashov
Automation features of surface mount technologies of printed boards in the realities of the state defense order The paper considers the problems of introducing the automation of surface mounting technologies on printed boards in the military equipment production in the realities of the state defense order.
Automation features of surface mount technologies of printed boards in the realities of the state defense order The paper considers the problems of introducing the automation of surface mounting technologies on printed boards in the military equipment production in the realities of the state defense order.
V. V. Kondrashov V. V. Chapkin A. V. Lukashenkov
Laser trimming simulation of fi lm resistors in ResModel as a basis for developing an optimal control system The paper considers the construction of a simulation system for the process of laser trimming of film resistors based on mesh circuit models. The approaches to the solution of problems arising during the trimming process development are offered.
Laser trimming simulation of fi lm resistors in ResModel as a basis for developing an optimal control system The paper considers the construction of a simulation system for the process of laser trimming of film resistors based on mesh circuit models. The approaches to the solution of problems arising during the trimming process development are offered.
V. V. Ivanov D. N. Tuzhilin A. A. Efi mov D. A. Mylnikov K. M. Khabarov P. V. Arsenov D. L. Saprykin
Developing additive technology for the production of 3D-microstructures based on aerosol nanoparticles printing with local laser sintering The paper highlights the principles of aerosol printing of 3D-microstructures, combining the processes of gas-discharge synthesis, aerosol deposition and local laser sintering of nanoparticle arrays in a single technological cycle. Laser sintering of microstructures is realized in a wide window of process speeds from 0.01 to 4 mm/s and allows coordinating the processes of aerosol deposition and sintering of nanoparticles on substrates.
Developing additive technology for the production of 3D-microstructures based on aerosol nanoparticles printing with local laser sintering The paper highlights the principles of aerosol printing of 3D-microstructures, combining the processes of gas-discharge synthesis, aerosol deposition and local laser sintering of nanoparticle arrays in a single technological cycle. Laser sintering of microstructures is realized in a wide window of process speeds from 0.01 to 4 mm/s and allows coordinating the processes of aerosol deposition and sintering of nanoparticles on substrates.
V. V. Vedeneev A. I. Reshmin S. K. Teplovodskii J. S. Zayko V. V. Trifonov A. V. Markin
Gas-dynamic protection of microelectronics processes and objects from external contamination The paper considers the technoloy of forming the submerged air jets of circular cross-section remaining unidirectional at the distance equal to 5–6 diameters of the jet at sufficiently high Reynolds numbers (~2000–13000). The efficiency of protection of microelectronic objects in such jets from the environment impact has been shown. The technology developed can be used for creating local clean zones not bounded by rigid walls in microelectronics production.
Gas-dynamic protection of microelectronics processes and objects from external contamination The paper considers the technoloy of forming the submerged air jets of circular cross-section remaining unidirectional at the distance equal to 5–6 diameters of the jet at sufficiently high Reynolds numbers (~2000–13000). The efficiency of protection of microelectronic objects in such jets from the environment impact has been shown. The technology developed can be used for creating local clean zones not bounded by rigid walls in microelectronics production.
A. V. Borodin, A. V. Veretennikov, S. V. Bozhko, S. V. Kotov, D. N. Kuzmin, V. A. Borodin
Factory of the future for developing and manufacturing customized vacuum equipment for scientifi c instrument making and high-tech industries The paper presents the scientific and technical background and activity of the Experimental Factory for Scientific Engineering with the Special Design Bureau of the Russian Academy of Sciences in the field of computer engineering, development and production of high vacuum equipment, as well as related scientific instruments and technological equipment. The project “Factories of the Future”, which is currently being implemented within the NTI (National Technology Initiative), for the development and production of customized vacuum equipment for scientific instruments and high-tech industries has been considered.
Factory of the future for developing and manufacturing customized vacuum equipment for scientifi c instrument making and high-tech industries The paper presents the scientific and technical background and activity of the Experimental Factory for Scientific Engineering with the Special Design Bureau of the Russian Academy of Sciences in the field of computer engineering, development and production of high vacuum equipment, as well as related scientific instruments and technological equipment. The project “Factories of the Future”, which is currently being implemented within the NTI (National Technology Initiative), for the development and production of customized vacuum equipment for scientific instruments and high-tech industries has been considered.
V. V. Mazhulin, P. M. Matyushin, E. A. Shamaev
Test rigs for ICs: development experience and new opportunities The paper highlights the development of special test rigs and test beds for new ICs. A cooperation model in IC development and testing has been proposed, and a possible trend of development has been described.
Test rigs for ICs: development experience and new opportunities The paper highlights the development of special test rigs and test beds for new ICs. A cooperation model in IC development and testing has been proposed, and a possible trend of development has been described.
O. Yu. Bulgakov
The state and directions of developing metrological support of tests in the ECB production The paper presents the main problems of metrological support of tests in the electronic component base production. The causes of these problems have been identified. Rational ways of solving such problems have been found.
The state and directions of developing metrological support of tests in the ECB production The paper presents the main problems of metrological support of tests in the electronic component base production. The causes of these problems have been identified. Rational ways of solving such problems have been found.
P. P. Kutsko, O. Yu. Bulgakov
The concept of creating an integrated center for organizing and conducting tests of ECB and radio electronics The article considers a number of objective and subjective problems at the radio electronic industry enterprises. The main tool for solving the problem has been identified. The main goal of the need to create an Integrated Center for organizing and conducting tests of ECB and REA has been set.
The concept of creating an integrated center for organizing and conducting tests of ECB and radio electronics The article considers a number of objective and subjective problems at the radio electronic industry enterprises. The main tool for solving the problem has been identified. The main goal of the need to create an Integrated Center for organizing and conducting tests of ECB and REA has been set.
A. A. Kuzmin, D. V. Nacharov, Yu. P. Mikhaylyuck, V. V. Vertegel, Yu. B. Gimpilevich
System for improving the discernibility of informative regions on digital images of integrated circuits layouts The paper presents the results of developing a prototype of a technical vision system based on a field programmable gate array. A method for improving the discernibility of informative regions on digital images of integrated circuits layouts has been presented.
System for improving the discernibility of informative regions on digital images of integrated circuits layouts The paper presents the results of developing a prototype of a technical vision system based on a field programmable gate array. A method for improving the discernibility of informative regions on digital images of integrated circuits layouts has been presented.
Стандартизация
S. V. Novichkov, D. E. Bandurin
Software and hardware VLSI verifi cation. SCE-MI standard The paper considers standard Co-Emulation Modeling Interface (SCE-MI) and advantages of using FPGA for SoC functional verification.
Software and hardware VLSI verifi cation. SCE-MI standard The paper considers standard Co-Emulation Modeling Interface (SCE-MI) and advantages of using FPGA for SoC functional verification.
D. V. Kulikov
A behavioral model of pipelined ADCs The paper is devoted to the development of behavioral models of pipelined ADC by Verilog-A, providing multi-factor optimization of ADC units, including multi-channel pipelined ADC.
A behavioral model of pipelined ADCs The paper is devoted to the development of behavioral models of pipelined ADC by Verilog-A, providing multi-factor optimization of ADC units, including multi-channel pipelined ADC.
A. A. Glushko, M. G. Chistyakov, I. V. Kudinov, S. A. Morozov, G. A. Yashin, A. V. Amirkhanov, V. V. Makarchuk, L. A. Zinchenko
Combining radiation transport simulations with TCAD modeling to address Single Event Eff ects The paper presents a procedure that allows multi-stage description of different physical processes taking place inside irradiated microelectronic devices. It incorporates modeling of initial interactions of bombarding energetic particles with matter, 3D simulation of charge carriers generated in the affected region and circuit-level computations that provide whole-system response. Here we discuss issues related to practical implementation of the procedure. Examples concerning SEU in SRAM cells irradiated with 14 MeV neutrons have been presented.
Combining radiation transport simulations with TCAD modeling to address Single Event Eff ects The paper presents a procedure that allows multi-stage description of different physical processes taking place inside irradiated microelectronic devices. It incorporates modeling of initial interactions of bombarding energetic particles with matter, 3D simulation of charge carriers generated in the affected region and circuit-level computations that provide whole-system response. Here we discuss issues related to practical implementation of the procedure. Examples concerning SEU in SRAM cells irradiated with 14 MeV neutrons have been presented.
V. V. Alekseev, A. I. Kolyadin, A. A. Chuprinov
A system of intellectual support of the designer based on united information space (IPR) The system of intellectual support of the designer (SIPP) Concept is aimed at the ultimate goal — the creation of an “electronic” product and includes both the development of VLSI (chips) and electronic equipment and printed circuit boards. The modern approach involves the use of a unified information space at all these and subsequent stages of the life cycle of the designed product.
A system of intellectual support of the designer based on united information space (IPR) The system of intellectual support of the designer (SIPP) Concept is aimed at the ultimate goal — the creation of an “electronic” product and includes both the development of VLSI (chips) and electronic equipment and printed circuit boards. The modern approach involves the use of a unified information space at all these and subsequent stages of the life cycle of the designed product.
M. M. Gourary, M. M. Zharov, L. P. Ionov, I. I. Mukhin, S. G. Rusakov, I. M. Ten, S. L. Ulyanov
PLL Phase Micromodel Considering Nonlinear Effects The paper cinsiders problems of noise analysis of fractional-N PLL circuits in the presence of nonlinear effects in the charge pump. An algorithm taking into account the current mismatch has been proposed for obtaining an equivalent quantization noise spectrum for the formation of a PLL linear phase macro-model. Simulation examples have been presented.
PLL Phase Micromodel Considering Nonlinear Effects The paper cinsiders problems of noise analysis of fractional-N PLL circuits in the presence of nonlinear effects in the charge pump. An algorithm taking into account the current mismatch has been proposed for obtaining an equivalent quantization noise spectrum for the formation of a PLL linear phase macro-model. Simulation examples have been presented.
O. S. Pivko, A. M. Galimov
Angular dependence and averaging over full solid angle of upset cross section in modern COTS memory circuits The paper highlights angular dependence of the upset cross section in modern commercial memory circuits designed in the planar CMOS and FinFET technologies.
Angular dependence and averaging over full solid angle of upset cross section in modern COTS memory circuits The paper highlights angular dependence of the upset cross section in modern commercial memory circuits designed in the planar CMOS and FinFET technologies.
R. S. Aristov, A. A. Gladkikh, V. N. Davydov, M. O. Komakhin
Developing software Kopycat platform for emulation of complex computing systems The paper considers the development of the “Kopycat” program emulation software and gives general information about the emulator. In addition, a comparison of the developed software with existing analogues has been presented as well as advantages and disadvantages of this software solution in comparison with analogues.
Developing software Kopycat platform for emulation of complex computing systems The paper considers the development of the “Kopycat” program emulation software and gives general information about the emulator. In addition, a comparison of the developed software with existing analogues has been presented as well as advantages and disadvantages of this software solution in comparison with analogues.
I. N. Bychkov, S. G. Lomako
Developing technology for packing VLSI This article highlights CAD for joint design of the body and VLSI chip and subsequent application in the process of assembling microchips. The developed technology of creating matrix enclosures for VLSI with a large number of outputs provides for the placement and planning of the outputs of the microcircuit chips, as well as the internal connections of the housing. The basis of the developed technology is the creation of a design automation system, which covers all the main stages of designing integrated circuit packages. The developed technology includes: formalizing the parameters of the used technological processes for manufacturing VLSI crystals, housing elements, as well as assembling chips, topological design of VLSI input / output elements, selecting the necessary matrix housing, as well as creating the optimal switching board of the housing and issuing the necessary design documentation for production.
Developing technology for packing VLSI This article highlights CAD for joint design of the body and VLSI chip and subsequent application in the process of assembling microchips. The developed technology of creating matrix enclosures for VLSI with a large number of outputs provides for the placement and planning of the outputs of the microcircuit chips, as well as the internal connections of the housing. The basis of the developed technology is the creation of a design automation system, which covers all the main stages of designing integrated circuit packages. The developed technology includes: formalizing the parameters of the used technological processes for manufacturing VLSI crystals, housing elements, as well as assembling chips, topological design of VLSI input / output elements, selecting the necessary matrix housing, as well as creating the optimal switching board of the housing and issuing the necessary design documentation for production.
A. V. Prikota, V. V. Bubnov
Modern Technologies in Electronic Circuit Simulation Released in SimOne Circuit Simulator The paper cpnsiders the problems of large electronic circuits simulation. Methods of accelerating the simulation process by using the decomposition approach to solving systems of linear algebraic equations with using technologies of parallel computing have been proposed.
Modern Technologies in Electronic Circuit Simulation Released in SimOne Circuit Simulator The paper cpnsiders the problems of large electronic circuits simulation. Methods of accelerating the simulation process by using the decomposition approach to solving systems of linear algebraic equations with using technologies of parallel computing have been proposed.
K. A. Medvedev, A. V. Kuzovkov, V. V. Ivanov
Algorithm and methodology for increasing the OPC-recipe effi ciency The paper describes the OPC-recipe calibration algorithm based on the differential evolution method. A technique for improving the quality of the recipe using the proposed algorithm has been developed and an experimental study has been carried out to evaluate its effectiveness.
Algorithm and methodology for increasing the OPC-recipe effi ciency The paper describes the OPC-recipe calibration algorithm based on the differential evolution method. A technique for improving the quality of the recipe using the proposed algorithm has been developed and an experimental study has been carried out to evaluate its effectiveness.
V. I. Karagusov
Determining the optimal warm-up power of SC-cut direct heating piezoelement The paper presents the calculations results of optimal warm-up power of SC-cut quartz crystal piezoelement with direct heating for reducing warm-up time of precision quartz crystal oscillators. The results have been achieved by calculating piezoelement thermal processes dynamics in warm-up mode on space thermal model.
Determining the optimal warm-up power of SC-cut direct heating piezoelement The paper presents the calculations results of optimal warm-up power of SC-cut quartz crystal piezoelement with direct heating for reducing warm-up time of precision quartz crystal oscillators. The results have been achieved by calculating piezoelement thermal processes dynamics in warm-up mode on space thermal model.
A. V. Andrianov
Practical ways of optimizing regression testing of “system-on-chip” projects The article describes a set of practical ways to reduce time costs when developing and debugging test scenarios of “system-on-chip” VLSI, as well as when optimizing regression testing. The article covers issues of picking optimal hardware for the task, fine-tuning operating system, designing the testbench and using select features from Cadence Xcellium software package.
Practical ways of optimizing regression testing of “system-on-chip” projects The article describes a set of practical ways to reduce time costs when developing and debugging test scenarios of “system-on-chip” VLSI, as well as when optimizing regression testing. The article covers issues of picking optimal hardware for the task, fine-tuning operating system, designing the testbench and using select features from Cadence Xcellium software package.
J. Kirshman
Understanding and Correctly Predicting Critical Metrics for Wireless RF Links Three cases demonstrate how system design software NI AWR Visual System Simulator overcomes the limitations of traditional spreadsheet analysis. The paper describes the advantages of using VSS to determine system specifications due to its powerful simulation capabilities and greater insight into the design.
Understanding and Correctly Predicting Critical Metrics for Wireless RF Links Three cases demonstrate how system design software NI AWR Visual System Simulator overcomes the limitations of traditional spreadsheet analysis. The paper describes the advantages of using VSS to determine system specifications due to its powerful simulation capabilities and greater insight into the design.
A. M. Galimov, E. S. Shalashova, I. A. Fateev, A. V. Alexandrov
Exploring the susceptibility to dice fl ip-fl op upsets in CREME-MC The dosimetric approach to cross section and error rate calculation of the DICE flip-flop is considered. The approach is based on the simultaneous deposited charge calculation in the sensitive volumes of the flip-flop by means of the CRÈME-MC Monte Carlo simulation tool.
Exploring the susceptibility to dice fl ip-fl op upsets in CREME-MC The dosimetric approach to cross section and error rate calculation of the DICE flip-flop is considered. The approach is based on the simultaneous deposited charge calculation in the sensitive volumes of the flip-flop by means of the CRÈME-MC Monte Carlo simulation tool.
S. I. Bokov, V. V. Alekseev, A. A. Chuprinov, A. A. Kolyadin
Issues of managing state target programs aimed at creating radio-electronic and information technologies A brief analysis and assessment of the available reserves to increase the efficiency of R & d on radio-electronic and information technologies is presented.
Issues of managing state target programs aimed at creating radio-electronic and information technologies A brief analysis and assessment of the available reserves to increase the efficiency of R & d on radio-electronic and information technologies is presented.
S. I. Bokov, V. V. Alekseev, A. A. Chuprinov, A. A. Kolyadin
Using knowledge bases in computer-aided design systems The paper presents a brief analysis and evaluation of the available reserves for increasing efficiency and product design using knowledge bases of electronic and information technologies.
Using knowledge bases in computer-aided design systems The paper presents a brief analysis and evaluation of the available reserves for increasing efficiency and product design using knowledge bases of electronic and information technologies.
Plenary reports
Navigationally connected VLSIs and modules
Т. Ю. Дубинко
Технология высокоточной навигации по сигналам ГНСС на основе коррекции эфемеридно-временной информации (технология РРР). Опыт создания, результаты испытаний и перспективы внедрения DOI: 10.22184/NanoRus.2019.12.89.32
Технология высокоточной навигации по сигналам ГНСС на основе коррекции эфемеридно-временной информации (технология РРР). Опыт создания, результаты испытаний и перспективы внедрения DOI: 10.22184/NanoRus.2019.12.89.32
High-performance computation systems
Information-management systems
Techologies and micro- and nanoelectronics components
V. P. Bokarev, G. Ya. Krasnikov, E. S. Gornev
Anisotropy of Crystals Surface Properties and its Role in Microelectronic Technology Anisotropy of the surface energy of crystal materials used in the silicon technology has been calculated with a model of coordination melting. Based on these calculations and some experimental data, anisotropies of electron work function on different faces of Al, Cu, Au, Ni, Ta, Cr, W crystals and their surface melting temperature have been evaluated. The paper highlights the relation between physical-chemical properties of crystallographicaly different metals surfaces of the cubic crystal system and the surface arrangement of atoms in the first coordination spheres.
Anisotropy of Crystals Surface Properties and its Role in Microelectronic Technology Anisotropy of the surface energy of crystal materials used in the silicon technology has been calculated with a model of coordination melting. Based on these calculations and some experimental data, anisotropies of electron work function on different faces of Al, Cu, Au, Ni, Ta, Cr, W crystals and their surface melting temperature have been evaluated. The paper highlights the relation between physical-chemical properties of crystallographicaly different metals surfaces of the cubic crystal system and the surface arrangement of atoms in the first coordination spheres.
P. I. Kozlov, N. A. Nagaev
Trends in the development of metal-ceramic packages: import substitution, tooling, components The paper considers tendencies of microelectronics development and formulates requirements to modern metal-ceramic packages. Besides, it presents the experience of the domestic factory in creating modern metal-ceramic packages.
Trends in the development of metal-ceramic packages: import substitution, tooling, components The paper considers tendencies of microelectronics development and formulates requirements to modern metal-ceramic packages. Besides, it presents the experience of the domestic factory in creating modern metal-ceramic packages.
D. A. Sukhanov
Modernizing thin-fi lm HIC production The paper analyses the problems encountered in the production of thin-film hybrid integrated circuits (TF HIC) and compares production technologies, using the contact photolithography method and laser exposure, as well as different ways of forming thin films. A comprehensive solution for modernizing TF HIC production has been found.
Modernizing thin-fi lm HIC production The paper analyses the problems encountered in the production of thin-film hybrid integrated circuits (TF HIC) and compares production technologies, using the contact photolithography method and laser exposure, as well as different ways of forming thin films. A comprehensive solution for modernizing TF HIC production has been found.
A. V. Kuzovkov, V. V. Ivanov
MPW reticle floorplanning method for low-volume production The paper describes reticle floorplanning method for MPW projects. The method allows minimizing dicing conflicts count between dies and thus minimizes wafer consumption for production.
MPW reticle floorplanning method for low-volume production The paper describes reticle floorplanning method for MPW projects. The method allows minimizing dicing conflicts count between dies and thus minimizes wafer consumption for production.
N. A. Kuznetsova
Application of new FN-16U photoresist to create semiconductor devices Photoresist FN-16U is a new material for the creation of metal contacts and conductive paths in semiconductor devices by “lift-off” photolithography.
Application of new FN-16U photoresist to create semiconductor devices Photoresist FN-16U is a new material for the creation of metal contacts and conductive paths in semiconductor devices by “lift-off” photolithography.
A. L. Potapov, I. B. Yashanin
Optimization and prospects of introducing the process of radiation rejection of microcircuits To ensure the resistance microcircuits to special factors, radiation rejection (RR) is used. An analysis of changes in the criteria parameters in the RR process has shown a possibility of optimizing the RR process. The possibility and expediency of expanding the number of parameters measured at RR have been shown.
Optimization and prospects of introducing the process of radiation rejection of microcircuits To ensure the resistance microcircuits to special factors, radiation rejection (RR) is used. An analysis of changes in the criteria parameters in the RR process has shown a possibility of optimizing the RR process. The possibility and expediency of expanding the number of parameters measured at RR have been shown.
Yu. M. Moskovskaya
Microelectronic parts’ radiation hardness assurance within fabrication process: guidelines to rational methodical approach selection criteria The approach has been developed for choosing a rational test volume and method to confirm the correspondence of a microelectronic part to the technical requirements, depending on particular radiation hardness category and based on a statistical analysis of radiation-sensitive parameters reserve and range values as well as of technological processes used.
Microelectronic parts’ radiation hardness assurance within fabrication process: guidelines to rational methodical approach selection criteria The approach has been developed for choosing a rational test volume and method to confirm the correspondence of a microelectronic part to the technical requirements, depending on particular radiation hardness category and based on a statistical analysis of radiation-sensitive parameters reserve and range values as well as of technological processes used.
Yu. M. Gerasimov, N. G. Grigoryev, A. V. Kobylyatskiy, Ya. Ya. Petrichkovich
Test chips for experiment-based radiation hardness calculation of nanometer systems-on-chip The paper highlights a concept of the test chip (TC) design as well as basic requirements for structures and blocks on the TC. The typical TC composition has been proposed for studying the technology capabilities in terms of radiation hardness and characterization thereof. It has been shown that the results of TC examination make it possible to predict the radiation hardness of systems-on-chip or SRAM chips by calculation and experimental methods.
Test chips for experiment-based radiation hardness calculation of nanometer systems-on-chip The paper highlights a concept of the test chip (TC) design as well as basic requirements for structures and blocks on the TC. The typical TC composition has been proposed for studying the technology capabilities in terms of radiation hardness and characterization thereof. It has been shown that the results of TC examination make it possible to predict the radiation hardness of systems-on-chip or SRAM chips by calculation and experimental methods.
И. В. Кулинич, В. А. Кагадей, Р. Н. Мухтеев
A method of packaging RF MEMs switch on GaAs wafer using a frame system The paper studies several methods of packaging the microwave MEMS-switch on a GaAs wafer. The method with a framework system has been chosen. With the help of mathematical modeling, the optimal geometry of the cell of the framework system has been determined, which corresponds to mechanical and hydrodynamic requirements. The technology of packaging has been developed.
A method of packaging RF MEMs switch on GaAs wafer using a frame system The paper studies several methods of packaging the microwave MEMS-switch on a GaAs wafer. The method with a framework system has been chosen. With the help of mathematical modeling, the optimal geometry of the cell of the framework system has been determined, which corresponds to mechanical and hydrodynamic requirements. The technology of packaging has been developed.
E. L. Kharchenko, A. V. Kuzovkov, V. V. Ivanov
Optimizing SRAF placement to increase photolithography resolution The paper presents the optimization method of SRAF placement with a view to expanding the process window and as a result increasing the resolution of photolithography.
Optimizing SRAF placement to increase photolithography resolution The paper presents the optimization method of SRAF placement with a view to expanding the process window and as a result increasing the resolution of photolithography.
I. N. Alekseev, V. D. Baykov, A. V. Glushkov, D. A. Domozhakov, A. V. Dubinskiy, N. Yu. Rannev
Problems of increasing speed characteristics of SpaceFibre transceivers The article analyses architectural and circuit design solutions for high-speed physical medium attachment (PMA) for SpaceFibre and GigaSpaceWire ports. Besides, it identifies optimal sets of programmable standard bit frequencies and proposes a universal transceiver.
Problems of increasing speed characteristics of SpaceFibre transceivers The article analyses architectural and circuit design solutions for high-speed physical medium attachment (PMA) for SpaceFibre and GigaSpaceWire ports. Besides, it identifies optimal sets of programmable standard bit frequencies and proposes a universal transceiver.
V. A. Chetverikov, G. V. Baranov, A. G. Italyantsev, A. S. Klyuchnikov
The eff ect of pore formation at thermal growth of metal silicides on the surface of bulk nanoscale Si structures The paper deals with the experimentally found effect of pore formation on the surface of silicon structures, as well as the phenomenological model of porosity formation in the process of silicidation reaction on the surface of silicon fin-structure.
The eff ect of pore formation at thermal growth of metal silicides on the surface of bulk nanoscale Si structures The paper deals with the experimentally found effect of pore formation on the surface of silicon structures, as well as the phenomenological model of porosity formation in the process of silicidation reaction on the surface of silicon fin-structure.
A. A. Sharapov, G. V. Baranov
Analyzing factors infl uencing the roughness of Si microelectronics topological structures We investigated the physics of the phenomena that cause the appearance and modification of the side surfaces roughness of nanoscale topological structures. We considered various technological techniques that allow reducing the roughness value in Si structures, and we proposed a number of methods to control the roughness of micro- and nanoelectronic structures.
Analyzing factors infl uencing the roughness of Si microelectronics topological structures We investigated the physics of the phenomena that cause the appearance and modification of the side surfaces roughness of nanoscale topological structures. We considered various technological techniques that allow reducing the roughness value in Si structures, and we proposed a number of methods to control the roughness of micro- and nanoelectronic structures.
A. A. Konarev, S. O. Ranchin, D. A. Varlamov
Electrochemical synthesis of tetramethylammonium hydroxide concentrate To develop a technology for making tetramethylammonium hydroxide concentrate, we have chosen a direction of research including a membrane electrolysis of a tetramethylammonium chloride solution. Based on the research, an experimental production of a tetramethylammonium hydroxide solution with a concentration of at least 20 % and a PP-051MS nonmetallic developer corresponding to the technical specifications of TU 2638-083-05784466-2015 and TU 2496-085-05784466-2015 has been created.
Electrochemical synthesis of tetramethylammonium hydroxide concentrate To develop a technology for making tetramethylammonium hydroxide concentrate, we have chosen a direction of research including a membrane electrolysis of a tetramethylammonium chloride solution. Based on the research, an experimental production of a tetramethylammonium hydroxide solution with a concentration of at least 20 % and a PP-051MS nonmetallic developer corresponding to the technical specifications of TU 2638-083-05784466-2015 and TU 2496-085-05784466-2015 has been created.
N. A. Tulina, A. N. Rossolenko, I. M. Shmytko, А. A. Ivanov, А. М. Ionov, S. I. Bozhko, V. V. Sirotkin, I. Yu. Borisenko,
Functional properties of anisotropic perovskite compounds in memristor structures for application in electronics The paper highlights bipolar resistive switching in Bi2Sr2CaCu2O8+y, Ва0.6K0.4BiO3−x single crystal- and Nd1.86Ce0.14CuO4 and YBa2Cu3O7−d epitaxial film-based heterostructures. The results are discussed in terms of fundamental properties of the parent HTSC compounds — antiferromagnetic metal-insulator due to oxygen doping. The formation and decay of a percolation channel during switching has been numerically simulated.
Functional properties of anisotropic perovskite compounds in memristor structures for application in electronics The paper highlights bipolar resistive switching in Bi2Sr2CaCu2O8+y, Ва0.6K0.4BiO3−x single crystal- and Nd1.86Ce0.14CuO4 and YBa2Cu3O7−d epitaxial film-based heterostructures. The results are discussed in terms of fundamental properties of the parent HTSC compounds — antiferromagnetic metal-insulator due to oxygen doping. The formation and decay of a percolation channel during switching has been numerically simulated.
A. N. Belov, A. M. Mastinin, A. A. Perevalov, V. I. Shevyakov
Specifics of forming memristors based on copper sulfide The paper presents the results of research into specifics of making memristors based on copper sulfide. The copper sulfidization process in chemical bath has been demonstrated in detail. It has been shown that increasing reagents concentration has significant influence on sulfide surface morphology.
Specifics of forming memristors based on copper sulfide The paper presents the results of research into specifics of making memristors based on copper sulfide. The copper sulfidization process in chemical bath has been demonstrated in detail. It has been shown that increasing reagents concentration has significant influence on sulfide surface morphology.
A. A. Golishnikov, M. G. Putrya, V. I. Shevyakov
Researching silicon deep plasma etching process for producing 3D-TSV structures The paper presents the results of studies of one of the fundamental processes in the 3D ICs technology — the silicon deep plasma etching for 3D-TSV structures producing. Besides, the work studies the influence of operating parameters in Si etching cycle on the process characteristics in high-density transformer coupled plasma (TCP). The ion-stimulated mechanism of the fluoride-carbon film deposition has been shown.
Researching silicon deep plasma etching process for producing 3D-TSV structures The paper presents the results of studies of one of the fundamental processes in the 3D ICs technology — the silicon deep plasma etching for 3D-TSV structures producing. Besides, the work studies the influence of operating parameters in Si etching cycle on the process characteristics in high-density transformer coupled plasma (TCP). The ion-stimulated mechanism of the fluoride-carbon film deposition has been shown.
V. I. Egorkin, M. N. Zhuravlev, V. E. Zemlyakov
Heterobipolar transistor with high breakdown voltage based on GaAs compounds nanoheterostructures The paper highlights the possibility of increasing the breakdown voltage of a heterobipolar transistor on the basis of gallium arsenide compounds. The breakdown voltage increase has been achieved due to the use of anisotropic chemical etching and plasma-chemical treatment with deposition of Si3N4. The value of the breakdown voltage is more than 25 V.
Heterobipolar transistor with high breakdown voltage based on GaAs compounds nanoheterostructures The paper highlights the possibility of increasing the breakdown voltage of a heterobipolar transistor on the basis of gallium arsenide compounds. The breakdown voltage increase has been achieved due to the use of anisotropic chemical etching and plasma-chemical treatment with deposition of Si3N4. The value of the breakdown voltage is more than 25 V.
A. O. Lebedev, S. V. Ivanov, O. M. Orlov
Functional methods of VSET and ROFF stabilization for RеRAM memory cells based on hafnium oxide This paper presents the results of applying functional methods of stabilization for main characteristics of ReRAM non-volatile memory cells. Two group of methods have been examined: impulse and DC-methods, it is shown that all methods from both groups lead to stabilization of Vset, and impulse methods also reduce the scatter of Roff. Advantages and disadvantages of every method are represented, statistical analysis of results has been carried out. Then the efficiency of all methods have been compared as well as phenomenological model illustrating processes in MIM during reset.
Functional methods of VSET and ROFF stabilization for RеRAM memory cells based on hafnium oxide This paper presents the results of applying functional methods of stabilization for main characteristics of ReRAM non-volatile memory cells. Two group of methods have been examined: impulse and DC-methods, it is shown that all methods from both groups lead to stabilization of Vset, and impulse methods also reduce the scatter of Roff. Advantages and disadvantages of every method are represented, statistical analysis of results has been carried out. Then the efficiency of all methods have been compared as well as phenomenological model illustrating processes in MIM during reset.
E. V. Ipatova, E. L. Kharchenko
Generating random configuration topology for OPC-model testing It is necessary to select test structures with a variety of topological forms. That is why the task of automated creation of a random configuration topology is relevant. This paper presents the developed method of generating a random configuration
topology.
Generating random configuration topology for OPC-model testing It is necessary to select test structures with a variety of topological forms. That is why the task of automated creation of a random configuration topology is relevant. This paper presents the developed method of generating a random configuration
topology.
Microelectronics products of general and dedicated purposes
S. A. Ilin, O. V. Lastochkin, A. S. Nadin, A. A. Novikov, D. S. Shipitsin
Design platform for CMOS RHBD 90 nm technology The article describes the design-technological platform for 90 nm CMOS RHBD technology, its composition, including a set of digital element libraries and I/O interface libraries, as well as a test crystal (TC) manufactured in the framework of research work, and analyzes the results of testing the TC and element base.
Design platform for CMOS RHBD 90 nm technology The article describes the design-technological platform for 90 nm CMOS RHBD technology, its composition, including a set of digital element libraries and I/O interface libraries, as well as a test crystal (TC) manufactured in the framework of research work, and analyzes the results of testing the TC and element base.
Yu. M. Gerasimov, N. G. Grigoryev, A. V. Kobylyatskiy, L. V. Menshenin
SRAM and register fi le IP-blocks for nanometer radiation-hardened systems on chip The paper considers the basic principles of SRAM and register files IP-blocks creation, its architectural, schematic and topological features of radiation-hardening-by-design for the use in the system-on-chip. The main requirements for synthesis and compilation software have been formulated. SRAM IP-blocks compilers have been developed on this basis.
SRAM and register fi le IP-blocks for nanometer radiation-hardened systems on chip The paper considers the basic principles of SRAM and register files IP-blocks creation, its architectural, schematic and topological features of radiation-hardening-by-design for the use in the system-on-chip. The main requirements for synthesis and compilation software have been formulated. SRAM IP-blocks compilers have been developed on this basis.
Yu. M. Gerasimov, N. G. Grigoryev, A. V. Kobylyatskiy, Ya. Ya. Petrichkovich, T. V. Solokhina
From The First CMOS Transistors To The Radiation-Hardened Nanometer CMOS Systems-on-chip The paper highlights the main questions of radiation-hardened CMOS IC design — from the first CMOS transistors in 1968 to modern nanometer “systems-on-chip” (SoC). The modern radiation-hardened CMOS IC are designed on bulk CMOS technologies ranging from 250 nm to 90 nm. The features of the VLSI radiation-hardness-by-design have been analyzed. A number of competitive systems-on-chip and SRAM chips have been designed based on radiation-hardened standard cell and IO libraries and IP-blocks.
From The First CMOS Transistors To The Radiation-Hardened Nanometer CMOS Systems-on-chip The paper highlights the main questions of radiation-hardened CMOS IC design — from the first CMOS transistors in 1968 to modern nanometer “systems-on-chip” (SoC). The modern radiation-hardened CMOS IC are designed on bulk CMOS technologies ranging from 250 nm to 90 nm. The features of the VLSI radiation-hardness-by-design have been analyzed. A number of competitive systems-on-chip and SRAM chips have been designed based on radiation-hardened standard cell and IO libraries and IP-blocks.
A. B. Boruzdina, A. A. Pechenkin, A. V. Yanenko, A. I. Chumakov, A. N. Egorov
Rational composition and features of practical application of test methods and installations for estimating microelectronic devices resistance to SEE It has been substantiated that a rational combination of reliability, informativeness and technical effectiveness of experimental evaluation of IC resistance to the SEE (heavy charged particles and high-energy cosmic protons, as well as single neutrons) is provided by a complex joint application of heavy ion cyclotrons, focused laser sources, protons accelerators and neutron generators, which do not compete, but complement each other.
Rational composition and features of practical application of test methods and installations for estimating microelectronic devices resistance to SEE It has been substantiated that a rational combination of reliability, informativeness and technical effectiveness of experimental evaluation of IC resistance to the SEE (heavy charged particles and high-energy cosmic protons, as well as single neutrons) is provided by a complex joint application of heavy ion cyclotrons, focused laser sources, protons accelerators and neutron generators, which do not compete, but complement each other.
A. V. Ulanova, A. I. Chumakov, A. V. Sogoyan, A. A. Smolin, A. O. Ahmetov
Estimating single event rate using two-parameter model The paper discusses existing approaches to single event rate estimation and describes their main limitations when applied to modern devices. A new alternative approach has been proposed and comparison to existing methods of single event rate estimation has been made.
Estimating single event rate using two-parameter model The paper discusses existing approaches to single event rate estimation and describes their main limitations when applied to modern devices. A new alternative approach has been proposed and comparison to existing methods of single event rate estimation has been made.
A. A. Antonov, A. G. Prozorova, L. A. Solovyeva, A. A. Krasnyuk
Software and hardware methods of locating errors and failures for redundant and multichannel IP-blocks The paper presents conclusions about circuit and methodological solutions for determinants (locators) of errors and failures implemented as specialized components of microprocessors.
Software and hardware methods of locating errors and failures for redundant and multichannel IP-blocks The paper presents conclusions about circuit and methodological solutions for determinants (locators) of errors and failures implemented as specialized components of microprocessors.
V. D. Baykov, D. A. Domozhakov, A. V. Dubinskiy
Estimating BER in SpaceFibre transceivers The article considers a method for estimating bit error ratio (BER) in multispeed transceivers of the serial channel at the design stage. A model of critical nodes of the path has been given.
Estimating BER in SpaceFibre transceivers The article considers a method for estimating bit error ratio (BER) in multispeed transceivers of the serial channel at the design stage. A model of critical nodes of the path has been given.
D. V. Matveev, A. M. Galimov, I. A. Fateev, D. V. Kulikov
Integrated solution for parrying thyristor eff ect for VLSI SoC The paper considers hardware SEL parry techniques. Test circuits have been developed to obtain characteristics of parasitic latch and to study methods of detecting thyristor effect.
Integrated solution for parrying thyristor eff ect for VLSI SoC The paper considers hardware SEL parry techniques. Test circuits have been developed to obtain characteristics of parasitic latch and to study methods of detecting thyristor effect.
A. A. Sapeghin, M. Yu. Barabanenkov, A. G. Italyantsev, M. E. Makarov
Principles of designing photon ADC and prospects for their implementation in integral performance The paper reviews researches in photonic analog-to-digital converters (ADC), as well as the current state and fundamental limits in resolution and sampling frequency of photonic ADCs. In addition, it discusses possibilities and prospects for embedding photonic ADCs in silicon technology.
Principles of designing photon ADC and prospects for their implementation in integral performance The paper reviews researches in photonic analog-to-digital converters (ADC), as well as the current state and fundamental limits in resolution and sampling frequency of photonic ADCs. In addition, it discusses possibilities and prospects for embedding photonic ADCs in silicon technology.
Ya. V. Antimirov, Yu. A. Ivanova, D. V. Kukushkin, A. O. Ovchinnikov, E. V. Chemodanov
Peculiarities of developing the Wi-Fi 802.11ah interface IP-core A model of wireless data transmission channel has been constructed; a demodulator based on simultaneous usage of auto- and crosscorrelators has been proposed; IEEE 802.11ah wireless communication IP-core has been developed.
Peculiarities of developing the Wi-Fi 802.11ah interface IP-core A model of wireless data transmission channel has been constructed; a demodulator based on simultaneous usage of auto- and crosscorrelators has been proposed; IEEE 802.11ah wireless communication IP-core has been developed.
N. I. Plis, R. G. Zakirov
Actions of Angstrem JSC on diversifying electronic components production for civilian usage The paper presents proposals on measures of State support for the development of civil products with military and civil quality control in military-industrial complex enterprises.
Actions of Angstrem JSC on diversifying electronic components production for civilian usage The paper presents proposals on measures of State support for the development of civil products with military and civil quality control in military-industrial complex enterprises.
D. V. Malygin
“Inter” telemetry control system based on “Synergy” platform The paper considers the economic analysis of high-tech products — nanosatellites. A technology of design and architecture “Inter” telemetry control system of “Synergy” multi-purpose block-modular platform for assembling nanosatellites has been presented.
“Inter” telemetry control system based on “Synergy” platform The paper considers the economic analysis of high-tech products — nanosatellites. A technology of design and architecture “Inter” telemetry control system of “Synergy” multi-purpose block-modular platform for assembling nanosatellites has been presented.
M. G. Chistyakov, A. A. Glushko, S. А. Morozov, G. A. Yashin, S. V. Rumyantsev
Methods of determining on-chip variation coefficients for automated design of extra large digital integrated circuits The paper analyses changes in the time parameters of the basic elements for the technological process of the SOI with a minimum design size of 0.35 mm. A comparison of the results has been made with the aim of choosing the coefficient of technological reserve.
Methods of determining on-chip variation coefficients for automated design of extra large digital integrated circuits The paper analyses changes in the time parameters of the basic elements for the technological process of the SOI with a minimum design size of 0.35 mm. A comparison of the results has been made with the aim of choosing the coefficient of technological reserve.
A. E. Agafonov, S. I. Boroshko, P. G. Kirichenko, O. V. Sysoeva, I. V. Tarasov, A. G. Khokhlova
A 65-nm videocontroller synthesizer for monitors with resolution up to 4K The paper highlights the design process of clock synthesizer for videocontroller implementation based on phase-locked loop (PLL) with autoshifting circuit and programmable charge pump (CP). An architecture of synthesizer for interface clock frequency with step 250 kHz and less without delta-sigma modulator, phase interpolator and randomizator in the feedback loop has been proposed.
A 65-nm videocontroller synthesizer for monitors with resolution up to 4K The paper highlights the design process of clock synthesizer for videocontroller implementation based on phase-locked loop (PLL) with autoshifting circuit and programmable charge pump (CP). An architecture of synthesizer for interface clock frequency with step 250 kHz and less without delta-sigma modulator, phase interpolator and randomizator in the feedback loop has been proposed.
E. S. Shalashova, O. S. Pivko, I. A. Fateyev, A. M. Galimov, D. V. Matveev, D. V. Kulikov, A. V. Aleksandrov
Designing test crystals for studying methods of ensuring radiation hardness This work presents a test chip concept aimed at studying the mitigation techniques against the space radiation impact on digital circuits. To provide the radiation hardness, the basic logic library with design hardening has been developed. Hardened flip-flops and DICE-like clock-gating cells have been designed.
Designing test crystals for studying methods of ensuring radiation hardness This work presents a test chip concept aimed at studying the mitigation techniques against the space radiation impact on digital circuits. To provide the radiation hardness, the basic logic library with design hardening has been developed. Hardened flip-flops and DICE-like clock-gating cells have been designed.
A. V. Nuykin, A. S. Kravtsov, K. Ya. Mytnik
Developing ultra-low power universal protected software and hardware platform for IoT devices The authors consider the requirements for the development of a universal hardware and software platform for various devices of IoT. Particular attention has been paid to the security of the platform at the hardware and software implementation level.
Developing ultra-low power universal protected software and hardware platform for IoT devices The authors consider the requirements for the development of a universal hardware and software platform for various devices of IoT. Particular attention has been paid to the security of the platform at the hardware and software implementation level.
V. V. Blagodatov, A. S. Kravtsov, A. S. Rudnitskiy, A. V. Nuykin
Estimating actual IC’s resistance to engineering attacks The paper highlights requirements for security elements and trusted environments, as well as ways to ensure their security and the possibility of analyzing the adequacy of the applied methods of protection.
Estimating actual IC’s resistance to engineering attacks The paper highlights requirements for security elements and trusted environments, as well as ways to ensure their security and the possibility of analyzing the adequacy of the applied methods of protection.
A. I. Rychkov
Low-power controller of OLED microdisplay The article considers implementation of low-power circuitry for VLSI of OLED microdisplay control. It is a part of an integral microdisplay with the matrix of organic light-emitting diodes applied to the surface of the VLSI crystal.
Low-power controller of OLED microdisplay The article considers implementation of low-power circuitry for VLSI of OLED microdisplay control. It is a part of an integral microdisplay with the matrix of organic light-emitting diodes applied to the surface of the VLSI crystal.
Microwave integrated circuits and modules
A. V. Volosov, M. I. Klychnikov, G. Ya. Krasnikov, S. V. Nefediev, P. V. Nefediev, N. A. Shcherbakov, M. D. Pyatochkin
Features of technology for manufacturing silicon commutation boards for microwave modules The work summarizes the experience of developing and designing silicon switching boards for manufacturing microwave transceiver modules. The main features of the topology and design of silicon switching boards and ways to solve the problems associated with their manufacture have been described.
Features of technology for manufacturing silicon commutation boards for microwave modules The work summarizes the experience of developing and designing silicon switching boards for manufacturing microwave transceiver modules. The main features of the topology and design of silicon switching boards and ways to solve the problems associated with their manufacture have been described.
S. V. Zozulya, A. P. Babkovsky, I. Yu. Michin, E. S. Balobanov
Experience of using modern domestic hardware components in the development of Rosatom State Corporation The paper highlights the possibility of creating equipment with digital signal modulation on modern domestic hardware components.
Experience of using modern domestic hardware components in the development of Rosatom State Corporation The paper highlights the possibility of creating equipment with digital signal modulation on modern domestic hardware components.
V. P. Timoshenkov, A. I. Khlybov, D. V. Rodionov, A. I. Panteleev, P. V. Timoshenkov
X-band RF T/R-module heat balance The paper highlights thermal modes research of X-band 10W PA (GaAs), LNA (GaAs) and CoreChip (GaAs) using two approaches: computer simulation and experiment (IR camera). All mentionaed blocks are part of T/R AESA module. Power amplifier die surface temperature as function of pulse width and power supply duty cycle has been determined.
X-band RF T/R-module heat balance The paper highlights thermal modes research of X-band 10W PA (GaAs), LNA (GaAs) and CoreChip (GaAs) using two approaches: computer simulation and experiment (IR camera). All mentionaed blocks are part of T/R AESA module. Power amplifier die surface temperature as function of pulse width and power supply duty cycle has been determined.
N. A. Usachev, D. I. Sotskov, V. V. Elesin, G. N. Nazarova, I. O. Metelkin, G. V. Chukov, A. G. Kuznetsov
Radiation hardening technique for mitigating displacement damage eff ects in A3B5 HBTs microwave functional blocks The paper presents radiation hardening by design technique for mitigating displacement damage effects in A3B5 HBTs frequency divider and buffer amplifier with operating frequency up to 10 GHz.
Radiation hardening technique for mitigating displacement damage eff ects in A3B5 HBTs microwave functional blocks The paper presents radiation hardening by design technique for mitigating displacement damage effects in A3B5 HBTs frequency divider and buffer amplifier with operating frequency up to 10 GHz.
K. A. Tsarik, S. D. Fedotov, V. N. Statsenko, E. M. Sokolov, N. V. Turnev
Investigating molecular-beam growth process of heteroepitaxial Ga(Al)N layers on 3C-SiC/Si(111) virtual substrates with on-axis and 4° off -axis orientation The paper presents the results of surface morphology and crystalline structure for Ga(Al)N layers grown by MBE on 3С-SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. RMS values increased up to ~7 nm for on-axis and to ~5 nm for 4° off-axis after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM about 0.61–0.76° for on-axis and about 0.55–0.65° for 4° off-axis. After GaN layer formation wafer bow ascended up to ~18 μm for on-axis and ~12 μm for 4° off-axis and tensile strain for all samples was confirmed.
Investigating molecular-beam growth process of heteroepitaxial Ga(Al)N layers on 3C-SiC/Si(111) virtual substrates with on-axis and 4° off -axis orientation The paper presents the results of surface morphology and crystalline structure for Ga(Al)N layers grown by MBE on 3С-SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. RMS values increased up to ~7 nm for on-axis and to ~5 nm for 4° off-axis after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM about 0.61–0.76° for on-axis and about 0.55–0.65° for 4° off-axis. After GaN layer formation wafer bow ascended up to ~18 μm for on-axis and ~12 μm for 4° off-axis and tensile strain for all samples was confirmed.
N. E. Ivanova, N. V. Zenchenko, N. V. Shchavruk, E. B. Evlampieva
Features of manufacturing microwave MICs using photolac at formation of ground plane above the crystal active surface The work is devoted to the solution of the problem of forming a ground plane in a microwave system based on GaN on sapphire substrates. A technological solution for the formation of the ground plane has been proposed using the domestic analogue of polyimide over the active part of the MIS. The results of tests of the manufactured instruments have been presented.
Features of manufacturing microwave MICs using photolac at formation of ground plane above the crystal active surface The work is devoted to the solution of the problem of forming a ground plane in a microwave system based on GaN on sapphire substrates. A technological solution for the formation of the ground plane has been proposed using the domestic analogue of polyimide over the active part of the MIS. The results of tests of the manufactured instruments have been presented.
Yu. S. Tsyplenkov, V. G. Ovchinnikov
Developing a radar receiver with a large dynamic range for UAV detection The requirements for a multi-beam radar receiver used for detecting small-scale low-visible low-speed targets at short range against the background of reflections from the earth’s surface and local objects, are extremely high in terms of providing a large dynamic range for 1 dB of compression, low noise and low power consumption. The present paper is devoted to the solution of the outlined problem in the space of diametrically contradictory parameters, where the problem of structural-parametric synthesis is formulated, methods for optimizing the structure and its elements are considered, and basic algorithms for finding general and particular solutions of the synthesis problem are determined.
Developing a radar receiver with a large dynamic range for UAV detection The requirements for a multi-beam radar receiver used for detecting small-scale low-visible low-speed targets at short range against the background of reflections from the earth’s surface and local objects, are extremely high in terms of providing a large dynamic range for 1 dB of compression, low noise and low power consumption. The present paper is devoted to the solution of the outlined problem in the space of diametrically contradictory parameters, where the problem of structural-parametric synthesis is formulated, methods for optimizing the structure and its elements are considered, and basic algorithms for finding general and particular solutions of the synthesis problem are determined.
I. A. Dovbysh, V. A. Shokirov
Developing Q-band power amplifier The paper presents a Q-band 10W power amplifier based on the 1in8 power divider/combiner with 76 % efficiency and commercial availability GaAs die chips. The construction requirements for power amplifier assembly have been determined. As an example, a power amplifier has been designed, fabricated and measured.
Developing Q-band power amplifier The paper presents a Q-band 10W power amplifier based on the 1in8 power divider/combiner with 76 % efficiency and commercial availability GaAs die chips. The construction requirements for power amplifier assembly have been determined. As an example, a power amplifier has been designed, fabricated and measured.
D. A. Sukhanov
Modernizing microwave MIC production The paper presents the analysis of the production market of microelectronic components and compares production technologies based on GaAs and GaN and their capabilities for expanding the operating frequency range of products. Besides, it analyzes the advantages and emerging problems when using microwave MIС in the production of microelectronics. A comprehensive solution for microwave MIC production modernization has been prepared.
Modernizing microwave MIC production The paper presents the analysis of the production market of microelectronic components and compares production technologies based on GaAs and GaN and their capabilities for expanding the operating frequency range of products. Besides, it analyzes the advantages and emerging problems when using microwave MIС in the production of microelectronics. A comprehensive solution for microwave MIC production modernization has been prepared.
I. M. Dobush, A. S. Salnikov, A. A. Kalentyev, A. E. Goryainov, A. A. Popov, D. V. Bilevich
Developing techniques and software for microwave monolithic integrated circuit element automatic modeling The paper deals with developing active and passive microwave monolithic integrated circuit components automatic modeling techniques which allow one to significantly reduce modeling time preserving acceptable accuracy. The proposed techniques are implemented in the 50ohm Tech M3-Suite software to make technique usage easier.
Developing techniques and software for microwave monolithic integrated circuit element automatic modeling The paper deals with developing active and passive microwave monolithic integrated circuit components automatic modeling techniques which allow one to significantly reduce modeling time preserving acceptable accuracy. The proposed techniques are implemented in the 50ohm Tech M3-Suite software to make technique usage easier.
A. A. Glybin, Yu. V. Burtsev, A. Yu. Lychagin, D. V. Cherevan, O. A. Fuzhenko, A. V. Moroz
Flight Testing Research Method for Analyzing Performance of Active Antenna Modules of the Earth Remote Sensing Spacecraft Active Electronically Scanned Antenna Array This paper highlights the results of the flight testing research of the active antenna module, designed for synthetic aperture radar of a spacecraft onboard special complex. Signals with linear frequency modulation were used as ranging signals. A technique for conducting flight testing research of synthesized aperture radars has been suggested.
Flight Testing Research Method for Analyzing Performance of Active Antenna Modules of the Earth Remote Sensing Spacecraft Active Electronically Scanned Antenna Array This paper highlights the results of the flight testing research of the active antenna module, designed for synthetic aperture radar of a spacecraft onboard special complex. Signals with linear frequency modulation were used as ranging signals. A technique for conducting flight testing research of synthesized aperture radars has been suggested.
A. A. Shabanov, A. V. Korovin
Evaluating main provisions of methodology for estimating electronic component base critical parameters by comparison of modulators As a result of the comparative analysis of the quadrature modulator 1327MA015 and its foreign analogue ADL5375, the main characteristics of the examined integrated circuits have been determined, as well as the main characteristics of the AMSTs, which may be affected by the data of the microcircuit. A methodical approach has been adopted for assessing the critical parameters of the electronic component base.
Evaluating main provisions of methodology for estimating electronic component base critical parameters by comparison of modulators As a result of the comparative analysis of the quadrature modulator 1327MA015 and its foreign analogue ADL5375, the main characteristics of the examined integrated circuits have been determined, as well as the main characteristics of the AMSTs, which may be affected by the data of the microcircuit. A methodical approach has been adopted for assessing the critical parameters of the electronic component base.
I. I. Mukhin, R. S. Shabardin, L. V. Nedashkovskiy, D. N. Morozov, N. V. Shabardina, I. S. Solovyev
Research into prospects of correcting RF quadrature modulators and demodulators parameters The article presents methods and results of designing RF quadrature modulators and demodulators which contain integrated correction circuits with digital control of parameters, such as phase and amplitude unbalances of quadrature signals, as well as tuning operating currents in mixers.
Research into prospects of correcting RF quadrature modulators and demodulators parameters The article presents methods and results of designing RF quadrature modulators and demodulators which contain integrated correction circuits with digital control of parameters, such as phase and amplitude unbalances of quadrature signals, as well as tuning operating currents in mixers.
A. P. Babkovsky, A. V. Baranov, V. S. Vasiliev, A. N. Mochanov
Airborne radio-transmitting device The paper considers prospects of designing a new generation on-board D-band radio-transmitting system based on domestic electronic components.
Airborne radio-transmitting device The paper considers prospects of designing a new generation on-board D-band radio-transmitting system based on domestic electronic components.
Microsystems
S. P. Timoshenkov, V. V. Kalugin, S. A. Anchutin, N. M. Zariankin, E. S. Kochurina
Features of designing and manufacturing a microaccelerometer sensing device The paper highlights the developed microaccelerometer sensing device design, as well as the results of modal and static analysis carried out using the method of terminating ultimate analysis. The mode of etching deep flutes in silicon using Bosch-process has been proposed. Photos of the sensing devices made are given.
Features of designing and manufacturing a microaccelerometer sensing device The paper highlights the developed microaccelerometer sensing device design, as well as the results of modal and static analysis carried out using the method of terminating ultimate analysis. The mode of etching deep flutes in silicon using Bosch-process has been proposed. Photos of the sensing devices made are given.
A. A. Kovalev, O. Yu. Yakovlev, V. I. Zuev, A. S. Kovalev, Ya. V. Belyaev, S. P. Timoshenkov
Design and technological features of manufacturing micromechanical systems of inertial MEMS sensors The article presents design and technological features of manufacturing inertial MEMS sensors based on the technological platform for direct connection of silicon wafers with SOI structures.
Design and technological features of manufacturing micromechanical systems of inertial MEMS sensors The article presents design and technological features of manufacturing inertial MEMS sensors based on the technological platform for direct connection of silicon wafers with SOI structures.
S. Yu. Ivanov, V. E. Turkov, S. A. Ulyanov
Developing digital control system for microelectromechanical gyroscope with ring resonator The paper highlights principles of control system development for a microelectromechanical gyroscope with ring resonator with unlimited usage of digital technologies. The description of the proposed control system and results of its numerical modeling have been provided. It has been shown that the frequency of drive mode motion can be used for precise temperature measurements. Results of gyroscope testing with automated test bench, which fully confirm the functionality of the developed control system, have been given.
Developing digital control system for microelectromechanical gyroscope with ring resonator The paper highlights principles of control system development for a microelectromechanical gyroscope with ring resonator with unlimited usage of digital technologies. The description of the proposed control system and results of its numerical modeling have been provided. It has been shown that the frequency of drive mode motion can be used for precise temperature measurements. Results of gyroscope testing with automated test bench, which fully confirm the functionality of the developed control system, have been given.
E. F. Pevtsov, A. V. Chuiko, K. A. Grishunin
Simulating solid-state wave gyroscope The paper presents the route of design and technique of simulating a wave solid-state gyroscope with a ring resonator. Simulation of gyroscope characteristics dependences on design data and their optimization for the job of the necessary mode of movement have been executed in particular, resonance frequency of excitation of the second mode. Besides, the paper offers a technique of compensating for mass defects resulting from admissions on technological operations of production of a wave solid-state gyroscope (technological defects) and leading to the shift of initial provision of nodal points.
Simulating solid-state wave gyroscope The paper presents the route of design and technique of simulating a wave solid-state gyroscope with a ring resonator. Simulation of gyroscope characteristics dependences on design data and their optimization for the job of the necessary mode of movement have been executed in particular, resonance frequency of excitation of the second mode. Besides, the paper offers a technique of compensating for mass defects resulting from admissions on technological operations of production of a wave solid-state gyroscope (technological defects) and leading to the shift of initial provision of nodal points.
S. Yu. Suzdaltsev, D. Yu. Obizhaev, S. Yu. Ivanov, S. A. Zhukova, V. E. Turkov
Applying silicon wafer direct bonding for creating sealed connector of MEMS sensing devices The paper considers the features of thermal annealing of Si and PECVD SiO2 surfaces which allows achieving high-quality direct bonding. Tentative annealing at 1000 °C and basic annealing at 800 °C of plates with PECVD SiO2 layers lead to high-quality bonding as plates after thermal oxidation.
Applying silicon wafer direct bonding for creating sealed connector of MEMS sensing devices The paper considers the features of thermal annealing of Si and PECVD SiO2 surfaces which allows achieving high-quality direct bonding. Tentative annealing at 1000 °C and basic annealing at 800 °C of plates with PECVD SiO2 layers lead to high-quality bonding as plates after thermal oxidation.
V. V. Amelichev, D. V. Kostyuk, D. V. Vasil’ev, Yu. V. Kazakov, D. A. Zhukov, E. P. Orlov, P. A. Belyakov
Thin-film magnetoresistive microsystems with high steepness of transformation The paper presents the results of the development of thin-film magnetoresistive microsystems with even and odd transfer characteristics. Besides, it considers the prospects of creating highly sensitive microsystems for converting the magnetic field and nonvolatile memory with arbitrary sampling based on the spin-tunnel magnetoresistive effect.
Thin-film magnetoresistive microsystems with high steepness of transformation The paper presents the results of the development of thin-film magnetoresistive microsystems with even and odd transfer characteristics. Besides, it considers the prospects of creating highly sensitive microsystems for converting the magnetic field and nonvolatile memory with arbitrary sampling based on the spin-tunnel magnetoresistive effect.
S. S. Generalov, V. V. Amelichev, I. V. Godovitsyn, S. A. Polomoshnov, S. V. Nikiforov, D. M. Grigoryev, A. V. Il’kov
Microsystems for transforming acoustic pressure The paper presents the results of development and research on capacitive type acoustic pressure transducers (APT), as well as the main principal specifications of APT capacitor and membranous modules.
Microsystems for transforming acoustic pressure The paper presents the results of development and research on capacitive type acoustic pressure transducers (APT), as well as the main principal specifications of APT capacitor and membranous modules.
N. A. Dyuzhev, E. E. Gusev, A. A. Dedkova, P. Yu. Glagolev
Investigating mechanical strength of two-layer SiO2/Si3N4 membranes A study has been made of the mechanical strength of a membrane element. The element is a two-layer structure of silicon oxide and silicon nitride on a silicon substrate. The critical pressure of a circular membrane is experimentally determined for various diameters. The elastic deformation has been shown as well as the distribution of mechanical stresses along the membrane diameter by numerical simulation in the COMSOL program. The area of critical deformation of membrane has been indicated. A comparison of the results of analytical calculation, numerical simulation and experiment has been made.
Investigating mechanical strength of two-layer SiO2/Si3N4 membranes A study has been made of the mechanical strength of a membrane element. The element is a two-layer structure of silicon oxide and silicon nitride on a silicon substrate. The critical pressure of a circular membrane is experimentally determined for various diameters. The elastic deformation has been shown as well as the distribution of mechanical stresses along the membrane diameter by numerical simulation in the COMSOL program. The area of critical deformation of membrane has been indicated. A comparison of the results of analytical calculation, numerical simulation and experiment has been made.
D. V. Vertyanov, V. N. Sidorenko, M. M. Burakov, I. A. Belyakov
Technologies of Inter-level Interconnection Formation for Manufacturing 3D Microassemblies The paper considers methods for inter-level interconnection formation in microassemblies using plated through-silicon vias and edge interconnection traces on the compound as well as describes samples of high-density silicon boards. Besides, it presents the results of studies on the processes of compounds plating and laser-induced ablation from the surface of the dielectric.
Technologies of Inter-level Interconnection Formation for Manufacturing 3D Microassemblies The paper considers methods for inter-level interconnection formation in microassemblies using plated through-silicon vias and edge interconnection traces on the compound as well as describes samples of high-density silicon boards. Besides, it presents the results of studies on the processes of compounds plating and laser-induced ablation from the surface of the dielectric.
D. N. Ivanov
Magnetic fi eld transducer with functional integrated structure Изобретение посвящено проблеме создания высокоточных сенсоров магнитного поля с чувствительностью до долей нанотесла. Создание таких приборов резко расширит область их применения, особенно в медицине. Высокая чувствительность и координатное разрешение сенсора достигаются применением функционально-интегрированной структуры в конструкции сенсора и возможностью минимизировать уровень шумов при использовании последовательного соединения цепочек пикселей сенсора магнитного поля.
Magnetic fi eld transducer with functional integrated structure Изобретение посвящено проблеме создания высокоточных сенсоров магнитного поля с чувствительностью до долей нанотесла. Создание таких приборов резко расширит область их применения, особенно в медицине. Высокая чувствительность и координатное разрешение сенсора достигаются применением функционально-интегрированной структуры в конструкции сенсора и возможностью минимизировать уровень шумов при использовании последовательного соединения цепочек пикселей сенсора магнитного поля.
V. A. Butuzov A. E. Nazarenko N. Yu. Dmitriev A. V. Trofi mov E. A. Smirnov T. V. Smirnova Yu. I. Bocharov V. Yu. Prokopyev O. N. Kus
Digital isolator based on integrated transformer The paper presents the results of developing a digital insulator based on an integral transformer. The isolator is realized as a microassembly of a transceiver chip and an integrated transformer. According to the test results, the maximum data transmission rate speed of the developed digital insulator is not less than 30 Mbit/s.
Digital isolator based on integrated transformer The paper presents the results of developing a digital insulator based on an integral transformer. The isolator is realized as a microassembly of a transceiver chip and an integrated transformer. According to the test results, the maximum data transmission rate speed of the developed digital insulator is not less than 30 Mbit/s.
N. V. Volkov N. I. Kargin A. S. Timoshenkov
Features of FIB technology application for MEMS nano elements fabrication The paper considers the possibility of using ion raster microscopy (FIB-Focused Ion Beam) as a processing system for the creation of elements of microelectronic mechanical systems (MEMS) on silicon substrates with characteristic dimensions of less than 1 µm.
Features of FIB technology application for MEMS nano elements fabrication The paper considers the possibility of using ion raster microscopy (FIB-Focused Ion Beam) as a processing system for the creation of elements of microelectronic mechanical systems (MEMS) on silicon substrates with characteristic dimensions of less than 1 µm.
V. F. Tupikin Yu. V. Gerasimenko A. S. Ermakova N. V. Komarov V. N. Komarov A. I. Sergienko
Technological features of technochemical wafer processing in technological process of manufacturing MEMS and microassemblies and promising design solutions for their implementation The paper considers features of bulk and surface chemical processing of plates and the formation of a photoresist mask in the creation of MEMS. The requirements for technological equipment have been determined. The design solutions of special technological equipment for manufacturing MEMS have been presented.
Technological features of technochemical wafer processing in technological process of manufacturing MEMS and microassemblies and promising design solutions for their implementation The paper considers features of bulk and surface chemical processing of plates and the formation of a photoresist mask in the creation of MEMS. The requirements for technological equipment have been determined. The design solutions of special technological equipment for manufacturing MEMS have been presented.
I. M. Malay V. P. Timoshenkov A. M. Rulev
On the necessity of creating microwave power measurement tools based on MEMS technology The paper highlights the necessity of creating microwave power measurement tools based on microelectromechanical systems technology. Besides, it considers methodical steps for research to identify options for designing a microwave power sensor, as well as prospects for manufacturing experimental samples.
On the necessity of creating microwave power measurement tools based on MEMS technology The paper highlights the necessity of creating microwave power measurement tools based on microelectromechanical systems technology. Besides, it considers methodical steps for research to identify options for designing a microwave power sensor, as well as prospects for manufacturing experimental samples.
A. N. Boyko L. R. Boev S. P. Timoshenkov A. V. Brykin
Studying activation process of TiV getter films The paper presents the results of studying thermal activation influence on the elemental composition of Ti-V getter films. It has been shown that heating of the samples is accompanied by diffusion of oxygen deep into the solid and decrease in oxygen surface concentration. The results of the work can be used to create getters based on Ti-V alloy.
Studying activation process of TiV getter films The paper presents the results of studying thermal activation influence on the elemental composition of Ti-V getter films. It has been shown that heating of the samples is accompanied by diffusion of oxygen deep into the solid and decrease in oxygen surface concentration. The results of the work can be used to create getters based on Ti-V alloy.
L. I. Dolgovykh A. I. Vinogradov N. M. Zaryankin M. S. Mikhailova A. V. Brykin
Features of eutectic bonding MEMS technology The paper presents the process of eutectic silicon wafers bonding using a thin gold layer deposited on one of bonding wafers. When testing samples after the process, there occurred the problem of uneven gold distribution across the substrate. To avoid the gold spreading effect after bonding, a damping air clamp has been developed.
Features of eutectic bonding MEMS technology The paper presents the process of eutectic silicon wafers bonding using a thin gold layer deposited on one of bonding wafers. When testing samples after the process, there occurred the problem of uneven gold distribution across the substrate. To avoid the gold spreading effect after bonding, a damping air clamp has been developed.
G. V. Prokofiev V. G. Stakhin M. A. Kosolapov
Developing a specialized microcircuit for magnetic precision position sensor based on multipolar magnetic technology The article presents the development of an absolute position sensor using a multipolar two-track magnetic system and a specialized signal processing chip. The sensor design is based on the nonius principle of obtaining the absolute position code from the magnetic sensor system on the Hall effect with tracking angle-code converters. The results of studying the developed system model have been presented, confirming its operability.
Developing a specialized microcircuit for magnetic precision position sensor based on multipolar magnetic technology The article presents the development of an absolute position sensor using a multipolar two-track magnetic system and a specialized signal processing chip. The sensor design is based on the nonius principle of obtaining the absolute position code from the magnetic sensor system on the Hall effect with tracking angle-code converters. The results of studying the developed system model have been presented, confirming its operability.
D. A. Dudarev S. P. Panasenko
Remote monitoring and control module for Elbrus servers The paper describes a system of remote monitoring and control for Elbrus servers. The system is based on a hardware module that combines both functions of remote monitoring and management of computers, and the ability to provide high levels of protection against unauthorized connection to the servers.
Remote monitoring and control module for Elbrus servers The paper describes a system of remote monitoring and control for Elbrus servers. The system is based on a hardware module that combines both functions of remote monitoring and management of computers, and the ability to provide high levels of protection against unauthorized connection to the servers.
V. M. Achildiev M. A. Basarab N. A. Bedro V. A. Soldatenkov Yu. K. Gruzevich Yu. N. Evseeva N. S. Konnova A. D. Levkovich V. M. Uspensky
Electroseismocardiography system consisting of a high-resolution electrocardiograph and a seismocardiography system based on micromechanical sensors An electroseismocardiography system has been developed that allows simultaneous measurement of the electrocardiograms parameters and seismic cardiograms. The algorithm of the electroseismocardio system operation has been developed. Experiments and analysis of the obtained results have been carried out.
Electroseismocardiography system consisting of a high-resolution electrocardiograph and a seismocardiography system based on micromechanical sensors An electroseismocardiography system has been developed that allows simultaneous measurement of the electrocardiograms parameters and seismic cardiograms. The algorithm of the electroseismocardio system operation has been developed. Experiments and analysis of the obtained results have been carried out.
V. A. Soldatenkov Yu. K. Gruzevich V. M. Achildiev V. A. Esakov N. A. Bedro M. N. Komarova A. D. Levkovich
Some features of micromechanical accelerometers errors identifi cation inside microvibration sensor and cardioseismometer unit The report is devoted to peculiarities of error identification of microelectromechanical accelerometers in the microvibration sensor and cardioseismometer unit. The experimental research data and achieved results have been provided.
Some features of micromechanical accelerometers errors identifi cation inside microvibration sensor and cardioseismometer unit The report is devoted to peculiarities of error identification of microelectromechanical accelerometers in the microvibration sensor and cardioseismometer unit. The experimental research data and achieved results have been provided.
Yu. M. Kernasovskiy I. A. Taratyn D. S. Ryzhkovskaya R. F. Chakukov S. A. Fılatov G. S. Kuchınskıı E. V. Batyrev
Developing the design and manufacturing techniques for test sensitive element of thermal stream sensor based on Seebeck’s effect The paper presents design and manufacturing techniques for a test sensitive element of thermal stream sensor based on Seebeck’s effect as well as measurements of integrated optical characteristics of the passivating covering absorption and reflection in the spectral range of 0.1–14.0 microns.
Developing the design and manufacturing techniques for test sensitive element of thermal stream sensor based on Seebeck’s effect The paper presents design and manufacturing techniques for a test sensitive element of thermal stream sensor based on Seebeck’s effect as well as measurements of integrated optical characteristics of the passivating covering absorption and reflection in the spectral range of 0.1–14.0 microns.
A. S. Timoshenkov
Trends in modern inertial micromechanical sensors development The paper describes the results of research and development of inertial MEMS, analyzing their key advantages and opportunities. The analytical substantiation of ultimate mechanical strength of the mentioned devices has been given.
Trends in modern inertial micromechanical sensors development The paper describes the results of research and development of inertial MEMS, analyzing their key advantages and opportunities. The analytical substantiation of ultimate mechanical strength of the mentioned devices has been given.
T. V. Krishtop S. V. Kokhanovsky P. V. Dudkin D. A. Zhevnenko A. S. Zlobin A. Yu. Belyaev V. G. Krishtop
Precision hydrophone based on electrochemical pressure transducer The paper highlights a new prototype of a high-precision hydrophone based on an electrochemical planar-type transducer. We have developed a new planar electrochemical microchip and designed a mechanical system that allows detecting the variable pressure at low frequencies up to 0.01 Hz. The developed sensing element can become the basis for the new generation of acoustic pressure receivers, vector acoustic receivers and sound pressure gradient loggers.
Precision hydrophone based on electrochemical pressure transducer The paper highlights a new prototype of a high-precision hydrophone based on an electrochemical planar-type transducer. We have developed a new planar electrochemical microchip and designed a mechanical system that allows detecting the variable pressure at low frequencies up to 0.01 Hz. The developed sensing element can become the basis for the new generation of acoustic pressure receivers, vector acoustic receivers and sound pressure gradient loggers.
N. N. Egorov S. A. Golubkov S. D. Fedotov V. N. Statsenko A. A. Romanov V. A. Metlov
Studying electron mobility and volt-ampere characteristics of fi eld-eff ect transistors depending on structural and electrophysical characteristics of ultrathin silicon on sapphire The paper presents a comparison of crystalline quality between domestic fabricated and imported SOS wafers. The wafers were produced by CVD and improved by solid phase epitaxial regrowth (SPER) process with thinning. The XRD measurement of ultrathin (≤100 nm) SOS 6 inch wafers revealed Si(400) diffraction peaks with FWHM of ~0.27° for domestic and FWHM ~0.30° for imported wafers. RHEED and TEM measurements have shown the absence of micro-twins reflexes and reduction in the defect density by more than 2 orders of magnitude for ultrathin SOS after SPER with Si+ implantation. Besides, it was revealed that the utilization of SPER leads to an increase in electron mobility >50 % as compared to standard CVD SOS wafer. However, the increase in carrier concentration in Si-layer up to ~3.13 · 1012 cm−2 leads to a fall in electron mobility down to ~150–160 cm2/W∙s. Threshold voltage of MOSFETs (n-channel) has shown slight dependence on the level of carrier concentration and varied in the range of 0.25–0.75 W.
Studying electron mobility and volt-ampere characteristics of fi eld-eff ect transistors depending on structural and electrophysical characteristics of ultrathin silicon on sapphire The paper presents a comparison of crystalline quality between domestic fabricated and imported SOS wafers. The wafers were produced by CVD and improved by solid phase epitaxial regrowth (SPER) process with thinning. The XRD measurement of ultrathin (≤100 nm) SOS 6 inch wafers revealed Si(400) diffraction peaks with FWHM of ~0.27° for domestic and FWHM ~0.30° for imported wafers. RHEED and TEM measurements have shown the absence of micro-twins reflexes and reduction in the defect density by more than 2 orders of magnitude for ultrathin SOS after SPER with Si+ implantation. Besides, it was revealed that the utilization of SPER leads to an increase in electron mobility >50 % as compared to standard CVD SOS wafer. However, the increase in carrier concentration in Si-layer up to ~3.13 · 1012 cm−2 leads to a fall in electron mobility down to ~150–160 cm2/W∙s. Threshold voltage of MOSFETs (n-channel) has shown slight dependence on the level of carrier concentration and varied in the range of 0.25–0.75 W.
D. A. Zhevnenko E. S. Gornev V. O. Kuzmenko P. V. Dudkin S. N. Zhabin T. V. Krishtop V. G. Krishtop
Studying electromigration and total harmonic distortion in planar electrochemical transducers The paper highlights electromigration influence on main characteristics of planar electrochemical systems with different parameters. The transporting processes have been simulated, current–voltage characteristic, transfer function and THD have been calculated, and quantitative estimates of the magnitude of the asymmetric electromigration flow and its effect on the nonlinearity coefficient of the system have been obtained.
Studying electromigration and total harmonic distortion in planar electrochemical transducers The paper highlights electromigration influence on main characteristics of planar electrochemical systems with different parameters. The transporting processes have been simulated, current–voltage characteristic, transfer function and THD have been calculated, and quantitative estimates of the magnitude of the asymmetric electromigration flow and its effect on the nonlinearity coefficient of the system have been obtained.
I. E. Lysenko O. A. Ezhova
Three-axis micromechanical accelerometer in single-chip design with a range of measured linear accelerations ±10 g The papaer highlights an original design of an accelerometer with three axes of sensitivity, as well as a mathematical model of the proposed sensor. Besides, simulation of its operation has been performed. An experimental sample has been manufactured and tested.
Three-axis micromechanical accelerometer in single-chip design with a range of measured linear accelerations ±10 g The papaer highlights an original design of an accelerometer with three axes of sensitivity, as well as a mathematical model of the proposed sensor. Besides, simulation of its operation has been performed. An experimental sample has been manufactured and tested.
D. A. Zhevnenko E. S. Gornev V. O. Kuzmenko S. V. Kokhanovsky P. V. Dudkin S. N. Zhabin V. G. Krishtop
Studying the electrochemical part of the electrochemical transducer transfer function The paper deals with studying the electrochemical part of the transfer function of the electrochemical transducer, simulating the transducing processes, processing the mechanical signal in time and calculating the electrochemical part of the transfer function of the electrochemical transducer with grid electrodes. We have set up an experiment for the direct measurement of the electrochemical part of the transfer function of the electrochemical transducer with grid electrodes, and a good agreement between the calculations and experiment has been obtained.
Studying the electrochemical part of the electrochemical transducer transfer function The paper deals with studying the electrochemical part of the transfer function of the electrochemical transducer, simulating the transducing processes, processing the mechanical signal in time and calculating the electrochemical part of the transfer function of the electrochemical transducer with grid electrodes. We have set up an experiment for the direct measurement of the electrochemical part of the transfer function of the electrochemical transducer with grid electrodes, and a good agreement between the calculations and experiment has been obtained.